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GMF05C-HS3
Vishay Semiconductors
5-Line ESD Protection Diode Array in LLP75-6A
Features
* Ultra compact LLP75-6A package * 5-line ESD-protection * Surge immunity acc. IEC 61000-4-5 IPPM > 12 A * Low leakage current IR < 1 A * ESD-immunity acc. IEC 61000-4-2 30 kV contact discharge 30 kV air discharge * Working voltage range VRWM = 5 V * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
6
5
4
19957
1
1
2
3
19956
Marking (example only)
XX YY
21001
Dot = Pin 1 marking XX = Date code YY = Type code (see table below)
Ordering Information
Device name GMF05C-HS3 Ordering code GMF05C-HS3-GS08 Taped units per reel (8 mm tape on 7" reel) 3000 Minimum order quantity 15000
Package Data
Device name GMF05C-HS3 Package name LLP75-6A Type code F5 Weight 5.2 mg Molding compound flammability rating UL 94 V-0 Moisture sensitivity level Soldering conditions
MSL level 1 (according J-STD-020) 260 C/10 s at terminals
* Please see document "Vishay Green and Halogen-Free Definitions (5-2008)" http://www.vishay.com/doc?99902 Document Number 85654 Rev. 1.8, 23-Sep-08 For technical support, please contact: ESD-Protection@vishay.com www.vishay.com 1
GMF05C-HS3
Vishay Semiconductors Absolute Maximum Ratings
Rating Peak pulse current Peak pulse power Test condition BiAs-mode: each input (pin 1; 3 - pin 6) to ground (pin 2); acc. IEC 61000-4-5; tp = 8/20 s; single shot BiAs-mode: each input (pin 1; 3 - pin 6) to ground (pin 2); acc. IEC 61000-4-5; tp = 8/20 s; single shot acc. IEC61000-4-2; 10 pulses BiAs-mode: each input (pin 1; 3 - pin 6) to ground (pin 2) Junction temperature contact discharge air discharge Symbol IPPM PPP VESD VESD TJ TSTG Value 12 200 30 30 - 55 to + 125 - 55 to + 150 Unit A W kV kV C C
ESD immunity
Operating temperature Storage temperature
BiAs-Mode (5-line Bidirectional Asymmetrical protection mode)
With the GMF05C-HS3 up to 5 signal- or data-lines (L1 - L5) can be protected against voltage transients. With pin 2 connected to ground and pin 1; 3 up tp pin 6 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified Maximum Reverse Working Voltage (VRWM) the protection diode between data line and ground offer a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The Clamping Voltage (VC) is defined by the BReakthrough Voltage (VBR) level plus the voltage drop at the series impedance (resistance and inductance) of the protection device. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the protection diode. The low Forward Voltage (VF) clamps the negative transient close to the ground level. Due to the different clamping levels in forward and reverse direction the GMF05C-HS3 clamping behaviour is Bidirectional and Asymmetrical (BiAs).
L1
1 2
5 4 3
L5 L4 L3
L2
3
20739
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For technical support, please contact: ESD-Protection@vishay.com
Document Number 85654 Rev. 1.8, 23-Sep-08
GMF05C-HS3
Vishay Semiconductors Electrical Characteristics
Ratings at 25 C, ambient temperature unless otherwise specified
GMF05C-HS3
BiAs mode: each input (pin 1; 3 - pin 6) to ground (pin 2) Parameter Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage at IPP = 1 A acc. IEC 61000-4-5 at IF = 12 A acc. IEC 61000-4-5 Forward clamping voltage at IPP = 1 A acc. IEC 61000-4-5 at VR = 0 V; f = 1 MHz Capacitance at VR = 2.5 V; f = 1 MHz CD 76 pF VF CD 1.5 126 150 V pF VC VF 7.8 9.5 5.5 V V Test conditions/remarks number of line which can be protected at IR = 1 A at VR = VRWM = 5 V at IR = 1 mA at IPP = 12 A acc. IEC 61000-4-5 Symbol N lines VRWM IR VBR VC 6 5 < 0.1 1 8 12.5 Min. Typ. Max. 5 Unit lines V A V V
If a higher surge current or Peak Pulse current (IPP) is needed, some protection diodes in the GMF05C-HS3 can also be used in parallel in order to "multiply" the performance. If two diodes are switched in parallel you get * double surge power = double peak pulse current (2 x IPPM) * half of the line inductance = reduced clamping voltage * half of the line resistance = reduced clamping voltage * double line Capacitance (2 x CD) * double Reverse leakage current (2 x IR)
L1
1 2 3
6 5 4
L2
L3
20740
Document Number 85654 Rev. 1.8, 23-Sep-08
For technical support, please contact: ESD-Protection@vishay.com
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GMF05C-HS3
Vishay Semiconductors Typical Characteristics
Tamb = 25 C, unless otherwise specified
120 % Rise time = 0.7 ns to 1 ns 100 % 80 % 60 %
53 %
100 BiAs-mode 10
Discharge Current IESD
IF (mA)
1
0.1
40 %
27 %
20 % 0% - 10 0 10 20 30 40 50 60 70 80 90 100
20557
0.01
0.001 0.5
21205
0.6
0.7
0.8
0.9
Time (ns)
VF (V)
Figure 1. ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 /150 pF)
Figure 4. Typical Forward Current IF vs. Forward Voltage VF
7 100 % 80 % 60 % 20 s to 50 % 40 % 2 20 % 0% 0
20548
8 s to 100 %
6 5
VR (V)
4 3
BiAs-mode
IPPM
1 0 0.01
21206
10
20
30
40
0.1
1
10
100
1000 10000
Time (s)
IR (A)
Figure 2. 8/20 s Peak Pulse Current Wave Form (acc. IEC 61000-4-5)
Figure 5. Typical Reverse Voltage VR vs. Reverse Current IR
140 f = 1 MHz 120 100 BiAs-mode
14 12 10 BiAs-mode
CD (pF)
60 40 20 0 0 1 2 3 4 5 6
VC (V)
80
8 6 4 2 0 0 2 4 6 8 10 12 14 16 Measured acc. IEC 61000-4-5 (8/20 s - wave form) VC
21204
VR (V)
21207
IPP (A)
Figure 3. Typical Capacitance CD vs. Reverse Voltage VR
Figure 6. Typical Peak Clamping Voltage VC vs. Peak Pulse Current IPP
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For technical support, please contact: ESD-Protection@vishay.com
Document Number 85654 Rev. 1.8, 23-Sep-08
GMF05C-HS3
Vishay Semiconductors
80 60 40 acc. IEC 61000-4-2 + 8 kV contact discharge
VC-ESD (V)
20 0 - 20 - 40 - 60 - 10 0
10 20 30 40 50 60 70 80 90
21208
t (ns)
Figure 7. Typical Clamping Performance at + 8 kV Contact Discharge (acc. IEC 61000-4-2)
60 40 20 acc. IEC 61000-4-2 - 8 kV contact discharge
VC-ESD (V)
0 - 20 - 40 - 60 - 80 - 10 0 10 20 30 40 50 60 70 80 90
21209
t (ns)
Figure 8. Typical Clamping Performance at - 8 kV Contact Discharge (acc. IEC 61000-4-2)
250 200 150 100 negative discharge
VC-ESD (V)
50 0 - 50 positive - 100 discharge - 150 acc. IEC 61000-4-2 - 200 contact discharge - 250 0 5 10 15
VC-ESD
20
25
30
21210
VESD (kV)
Figure 9. Typical Peak Clamping Voltage at ESD Contact Discharge (acc. IEC 61000-4-2)
Document Number 85654 Rev. 1.8, 23-Sep-08
For technical support, please contact: ESD-Protection@vishay.com
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GMF05C-HS3
Vishay Semiconductors Package Dimensions in millimeters (inches): LLP75-6A
18058
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For technical support, please contact: ESD-Protection@vishay.com
Document Number 85654 Rev. 1.8, 23-Sep-08
GMF05C-HS3
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85654 Rev. 1.8, 23-Sep-08
For technical support, please contact: ESD-Protection@vishay.com
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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